类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | CAS100H12AM1 | Cree/Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Chassis Mount, Screw | 底座安装 | Module | 3 | Module | 168A | 2 | Bulk | 2013 | Z-FET™ | Obsolete | 1 (Unlimited) | 125°C | -55°C | 568W | 568W | 568W | 2 N-Channel (Half Bridge) | 20mOhm @ 20A, 20V | 3.1V @ 50mA | 9500pF @ 800V | 1200V 1.2kV | 168A | 2.6V | 20V | 1.2kV | 9.5nF | Standard | 16mOhm | 20 mΩ | 3.1 V | 无 | Unknown | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | LP1030DK1-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | SOT-23-5 | -25°C~125°C TJ | Tape & Reel (TR) | 2014 | Obsolete | 1 (Unlimited) | 125°C | -25°C | 2 P-Channel (Dual) | 180Ohm @ 20mA, 7V | 2.4V @ 1mA | 10.8pF @ 25V | 300V | 10.8pF | Standard | 180 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STS5DPF20L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 125 ns | 150°C TJ | Tape & Reel (TR) | STripFET™ II | Obsolete | 1 (Unlimited) | 8 | EAR99 | -20V | 1.6W | 鸥翼 | -5A | STS5D | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.6W | 25 ns | 2 P-Channel (Dual) | SWITCHING | 55m Ω @ 2.5A, 10V | 2.5V @ 250μA | 1350pF @ 16V | 16nC @ 5V | 35ns | 35 ns | 5A | 16V | 5A | 0.075Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
![]() | EPC2103 | EPC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | Die | Die | 28A | -40°C~150°C TJ | Tape & Reel (TR) | eGaN® | 活跃 | 1 (Unlimited) | 2 N-Channel (Half Bridge) | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 760pF @ 40V | 6.5nC @ 5V | 80V | GaNFET (Gallium Nitride) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EPC2101 | EPC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | Die | Die | 9.5A 38A | -40°C~150°C TJ | Tape & Reel (TR) | eGaN® | 活跃 | 1 (Unlimited) | 2 N-Channel (Half Bridge) | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 300pF @ 30V 1200pF @ 30V | 2.7nC @ 5V, 12nC @ 5V | 60V | GaNFET (Gallium Nitride) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N35AFE,LF | Toshiba Semiconductor and Storage | 数据表 | 8 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 250mA Ta | 2 | 150°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 6 | FLAT | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 250mW | 2 N-Channel (Dual) | SWITCHING | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 36pF @ 10V | 0.34nC @ 4.5V | 20V | 0.25A | 2.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.2V Drive | 10 pF | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
AO4813_002 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 7.1A Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 2W | 2 P-Channel (Dual) | 25m Ω @ 7A, 10V | 2.5V @ 250μA | 1250pF @ 15V | 19nC @ 10V | 30V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2041UFDB-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.4W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 4.2A, 4.5V | 1.4V @ 250μA | 713pF @ 10V | 15nC @ 8V | 20V | 4.7A | 0.04Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
![]() | GWM180-004X2-SMD | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 17-SMD, Gull Wing | SILICON | 6 | -55°C~175°C TJ | Tube | 2011 | yes | 活跃 | 1 (Unlimited) | 17 | EAR99 | DUAL | 未说明 | 未说明 | 17 | R-XDSO-G17 | 不合格 | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 6 N-Channel (3-Phase Bridge) | SWITCHING | 2.5m Ω @ 100A, 10V | 4.5V @ 1mA | 110nC @ 10V | 40V | 180A | 0.0025Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
AON7900 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 8A 13A | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 1.8W | 增强型MOSFET | 2 N-Channel (Half Bridge) | 21m Ω @ 8A, 10V | 2.3V @ 250μA | 710pF @ 15V | 11nC @ 10V | 30V | 13A | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | VMM300-03F | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 32 Weeks | 底座安装 | 底座安装 | Y3-DCB | 7 | SILICON | 2 | -40°C~150°C TJ | Bulk | 2000 | HiPerFET™ | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 1.5kW | UPPER | UNSPECIFIED | 未说明 | 未说明 | VMM | 不合格 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 增强型MOSFET | ISOLATED | 1500W | 2 N-Channel (Dual) | SWITCHING | 8.6m Ω @ 145A, 10V | 4V @ 30mA | 40000pF @ 25V | 1440nC @ 10V | 300V | 290A | 1160A | 300V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
NDS8926 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 5.5A | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 900mW | 2 N-Channel (Dual) | 35m Ω @ 5.5A, 4.5V | 1V @ 250μA | 760pF @ 10V | 30nC @ 4.5V | 20V | 逻辑电平门 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EPC2106 | EPC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | Die | Die | 1.7A | -40°C~150°C TJ | Tape & Reel (TR) | eGaN® | 活跃 | 1 (Unlimited) | 2 N-Channel (Half Bridge) | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 75pF @ 50V | 0.73nC @ 5V | 100V | GaNFET (Gallium Nitride) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
UPA2352T1P-E4-A | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 4-XFLGA | YES | SILICON | 4A Ta | 2 | 150°C | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4 | BOTTOM | BALL | compliant | 4 | S-PBGA-B4 | 不合格 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 750mW Ta | 2 N-Channel (Dual) Common Drain | SWITCHING | 43m Ω @ 2A, 4.5V | 1.5V @ 1mA | 330pF @ 10V | 5.7nC @ 4V | 24V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 2.5V Drive | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
CMLDM7002AG TR | Central Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 150°C | compliant | 增强型MOSFET | N-CHANNEL | 0.28A | METAL-OXIDE SEMICONDUCTOR | 0.35W | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOC3860 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-XDFN | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 2.5W | 2 N-Channel (Dual) Common Drain | 900mV @ 250μA | 44nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8659-TL-HX | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | Tape & Reel (TR) | 2016 | Obsolete | 1 (Unlimited) | 30V | 53A | 24mOhm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPC8207(TE12L,Q) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | 8-SOP (5.5x6.0) | 6A | 2 | 150°C TJ | Tape & Reel (TR) | 2002 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 20V | 750mW | 6A | TPC*207 | 1.5W | 450mW | 2 N-Channel (Dual) | 20mOhm @ 4.8A, 4V | 1.2V @ 200μA | 2010pF @ 10V | 22nC @ 5V | 20V | 6A | 12V | 2.01nF | 逻辑电平门 | 20 mΩ | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
SSM6N48FU,RF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 2 | 150°C TJ | Digi-Reel® | 2014 | Discontinued | 1 (Unlimited) | 6 | 300mW | 鸥翼 | unknown | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 300mW | 2 N-Channel (Dual) | SWITCHING | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 15.1pF @ 3V | 30V | 100mA | 20V | 0.1A | 5.4Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAS325M12HM2 | Cree/Wolfspeed | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | Module | Module | 444A Tc | 175°C TJ | Bulk | 2016 | Z-REC™ | 活跃 | 不适用 | 3000W | 2 N-Channel (Half Bridge) | 4.3mOhm @ 400A, 20V | 4V @ 105mA | 1127nC @ 20V | 1200V 1.2kV | Silicon Carbide (SiC) | 3.7mOhm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
LN100LA-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-VFLGA | 6 | SILICON | 2 | -25°C~125°C TJ | Tape & Reel (TR) | 2014 | Obsolete | 1 (Unlimited) | 6 | EAR99 | 350mW | BOTTOM | BUTT | 260 | 40 | 2 | Dual | 增强型MOSFET | 2 N-Channel (Cascoded) | AMPLIFIER | 3000 Ω @ 2mA, 2.8V | 1.6V @ 10μA | 50pF @ 25V | 1200V 1.2kV | 3mA | 1.6V | 600V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
SSM6L12TU,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 6-SMD, Flat Leads | 500mA Ta | 150°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 500mW | N and P-Channel | 145m Ω @ 500mA, 4.5V, 260m Ω @ 250mA, 4V | 1.1V @ 100μA | 245pF @ 10V 218pF @ 10V | 30V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD1103SBL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | 14-SOIC | 40mA 16mA | 0°C~70°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 2 N and 2 P-Channel Matched Pair | 75Ohm @ 5V | 1V @ 10μA | 10pF @ 5V | 10.6V | 16mA | 13.2V | -12V | 10pF | Standard | 270Ohm | 75 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD1116PAL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | 0°C~70°C TJ | Tube | 2003 | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | 500Ohm @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | 4.8mA | 13.2V | 12V | Standard | 350Ohm | 500 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SLA5085 | Sanken | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 通孔 | 12-SIP | SILICON | 5 | 150°C TJ | Tube | 2001 | yes | 不用于新设计 | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 5W | SINGLE | 未说明 | unknown | 未说明 | 12 | R-PSFM-T12 | 不合格 | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 5W | 5 N-Channel, Common Source | 220m Ω @ 3A, 4V | 2V @ 250μA | 320pF @ 10V | 60V | 10A | 0.22Ohm | 60V | 30 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 |
CAS100H12AM1
Cree/Wolfspeed
分类:Transistors - FETs, MOSFETs - Arrays
LP1030DK1-G
Microchip Technology
分类:Transistors - FETs, MOSFETs - Arrays
STS5DPF20L
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
EPC2103
EPC
分类:Transistors - FETs, MOSFETs - Arrays
EPC2101
EPC
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N35AFE,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
0.797363
AO4813_002
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
DMN2041UFDB-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
GWM180-004X2-SMD
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
AON7900
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
VMM300-03F
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
NDS8926
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
EPC2106
EPC
分类:Transistors - FETs, MOSFETs - Arrays
UPA2352T1P-E4-A
Renesas Electronics America
分类:Transistors - FETs, MOSFETs - Arrays
CMLDM7002AG TR
Central Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AOC3860
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ECH8659-TL-HX
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
TPC8207(TE12L,Q)
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N48FU,RF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
CAS325M12HM2
Cree/Wolfspeed
分类:Transistors - FETs, MOSFETs - Arrays
LN100LA-G
Microchip Technology
分类:Transistors - FETs, MOSFETs - Arrays
SSM6L12TU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
ALD1103SBL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD1116PAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SLA5085
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
